S DP /B 55N03L
S amHop Microelectronics C orp.
S eptember , 2002
N-Channel Logic Level E nhancement Mode Field E ffect Transistor
4
P R ODUC T S UMMAR Y
V
DS S
30V
F E AT UR E S
( m
W
)
TYP
I
D
55A
R
DS (on)
S uper high dense cell design for extremely low R DS (ON).
High power and current handling capability.
TO-220 & TO-263 package.
12.5 @ V
G S
= 10V
20 @ V
G S
= 4.5V
D
D
G
D
S
G
S
G
S DP S E R IE S
TO-220
S DB S E R IE S
TO-263(DD-P AK)
S
ABS OLUTE MAXIMUM R ATINGS (TC =25 C unless otherwise noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous
-P ulsed
a
S ymbol
V
DS
V
GS
@ TJ=125 C
I
D
I
DM
I
S
P
D
T
J
, T
S TG
Limit
30
20
55
140
55
75
0.5
-65 to 175
Unit
V
V
A
A
A
W
W/ C
C
Drain-S ource Diode Forward C urrent
Maximum P ower Dissipation @ Tc=25 C
Derate above 25 C
Operating and S torage Temperature R ange
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-C ase
Thermal R esistance, Junction-to-Ambient
R
JC
R
JA
1
2.5
62.5
C /W
C /W
S DP /B 55N03L
E LE CTR ICAL CHAR ACTE R IS TICS (T
C
=25 C unless otherwise noted)
4
Parameter
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
S ymbol
BV
DS S
I
DS S
I
GS S
V
GS (th)
R
DS (ON)
I
D(ON)
g
FS
C
IS S
C
OS S
C
RSS
b
Condition
V
GS
= 0V, I
D
= 250uA
V
DS
= 24V, V
GS
=0V
V
GS
= 16V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250uA
V
GS
= 10V, I
D
= 27A
V
GS
= 4.5V, I
D
= 22A
V
GS
= 10V, V
DS
= 10V
V
DS
= 10V, I
D
= 27A
Min Typ Max Unit
30
10
100
V
uA
nA
V
m ohm
m ohm
ON CHAR ACTE R IS TICS
a
Gate Threshold Voltage
Drain-S ource On-S tate R esistance
On-S tate Drain Current
Forward Transconductance
1
1.5
12.5
20
60
32
930
340
120
V
DD
= 15V,
I
D
= 1A,
V
GS
= 10V,
R
GE N
=60
ohm
V
DS
=15V, I
D
=27.5A,V
GS
=10V
V
DS
=15V, I
D
=27.5A,V
GS
=4.5V
V
DS
=15V, I
D
= 27.5A,
V
GS
=10V
2
3
14
23
A
S
P
F
P
F
P
F
DYNAMIC CHAR ACTE R IS TICS
b
Input Capacitance
Output Capacitance
R everse Transfer Capacitance
V
DS
=15V, V
GS
= 0V
f =1.0MH
Z
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-S ource Charge
Gate-Drain Charge
t
D(ON)
t
r
t
D(OFF)
t
f
Q
g
Q
gs
Q
gd
17
23
37
20
26.1
5.4
4.6
16
250
90
200
35
ns
ns
ns
ns
nC
nC
nC
nC
13.7 16.5
S DP /B 55N03L
E LE CTR ICAL CHAR ACTE R IS TICS (T
C
=25 C unless otherwise noted)
Parameter
Diode Forward Voltage
S ymbol
V
SD
Condition
V
GS
= 0V, Is =26A
Min Typ Max Unit
0.9
1.3
V
4
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS
a
Notes
a.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
50
25
-55 C
V
G S
=10,9,8,7,6,5,4V
I
D
, Drain C urrent(A)
40
I
D
, Drain C urrent (A)
T
J
=125 C
20
30
15
10
25 C
5
0
20
V
G S
=3V
10
0
0
0.5
1.0
1.5
2.0
2.5
3.0
1
2
3
4
5
6
V
DS
, Drain-to-S ource Voltage (V )
V
G S
, G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
2400
2.2
F igure 2. Trans fer C haracteris tics
V
G S
=10V
I
D
=27A
R
DS (ON)
, Normalized
Drain-S ource On-R es is tance
C , C apacitance (pF )
2000
1600
1200
C is s
800
400
0
0
5
10
15
20
C os s
C rs s
25
30
1.8
1.4
1.0
0.6
0.2
0
-50
-25
0
25
50
75
100 125
T j( C )
V
DS
, Drain-to S ource Voltage (V )
F igure 3. C apacitance
F igure 4. On-R es is tance Variation with
Temperature
3
S DP /B 55N03L
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25
50
75
100 125
V
DS
=V
G S
I
D
=250uA
B V
DS S
, Normalized
Drain-S ource B reakdown V oltage
V th, Normalized
G ate-S ource T hres hold V oltage
1.3
1.15
I
D
=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75 100 125
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation
with T emperature
50
F igure 6. B reakdown V oltage V ariation
with T emperature
50
g
F S
, T rans conductance (S )
Is , S ource-drain current (A)
40
30
20
10
V
DS
=10V
0
0
10
20
30
40
10
1
0.1
0.4
0.6
0.8
1.0
1.2
1.4
I
DS
, Drain-S ource C urrent (A)
V
S D
, B ody Diode F orward V oltage (V )
F igure 7. T rans conductance V ariation
with Drain C urrent
10
V
G S
, G ate to S ource V oltage (V )
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
300
200
8
6
4
2
0
0
I
D
, Drain C urrent (A)
V
DS
=15V
I
D
=27.5A
100
R
D
O
S
(
Li
N)
mi
t
10
ms
10
0m
DC
s
10
0
μ
1m
s
s
10
1
0.5
0.1
V
G S
=10V
S ingle P ulse
T c=25 C
1
10
30 60
4
8
12
16
20
24
28 32
Qg, T otal G ate C harge (nC )
V
DS
, Drain-S ource V oltage (V )
F igure 9. G ate C harge
4
F igure 10. Maximum S afe
O perating Area
S DP /B 55N03L
V
DD
t
on
V
IN
D
V
G S
R
GE N
G
90%
t
off
t
r
90%
R
L
V
OUT
t
d(on)
V
OUT
t
d(off)
90%
10%
t
f
10%
INVE R TE D
S
V
IN
50%
10%
50%
P ULS E WIDTH
F igure 11. S witching T es t C ircuit
F igure 12. S witching Waveforms
2
r(t),Normalized E ffective
T ransient T hermal Impedance
1
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
S ingle P uls e
0.01
0.01
1.
2.
3.
4.
1
10
100
P
DM
t
1
t
2
R
θJ
C
(t)=r (t) * R
θJ
C
R
θJ
C
=S ee Datas heet
T
J M-
T
C
= P * R
θJ
C
(t)
Duty C ycle, D=t1/t2
1000
10000
0.1
S quare Wave P uls e Duration (ms ec)
F igure 13. Normalized T hermal T rans ient Impedance C urve
5
